high voltage transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 140 vdc collectorbase voltage v cbo 160 vdc emitterbase voltage v ebo 6.0 vdc collector current e continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c device marking mmbt5550lt1 = m1f; mmbt5551lt1 = g1 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (3) (i c = 1.0 madc, i b = 0) mmbt5550 mmbt5551 v (br)ceo 140 160 e e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) mmbt5550 mmbt5551 v (br)cbo 160 180 e e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 e vdc collector cutoff current (v cb = 100 vdc, i e = 0) mmbt5550 (v cb = 120 vdc, i e = 0) mmbt5551 (v cb = 100 vdc, i e = 0, t a = 100 c) mmbt5550 (v cb = 120 vdc, i e = 0, t a = 100 c) mmbt5551 i cbo e e e e 100 50 100 50 nadc m adc emitter cutoff current (v eb = 4.0 vdc, i c = 0) i ebo e 50 nadc 1. fr5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. pulse test: pulse width = 300 s, duty cycle = 2.0%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 635 publication order number: mmbt5550lt1/d mmbt5550lt1 mmbt5551lt1 1 2 3 case 31808, style 6 sot23 (to236) mmbt5551lt1 is a preferred device collector 3 1 base 2 emitter
mmbt5550lt1 mmbt5551lt1 http://onsemi.com 636 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 1.0 madc, v ce = 5.0 vdc) mmbt5550 mmbt5551 (i c = 10 madc, v ce = 5.0 vdc) mmbt5550 mmbt5551 (i c = 50 madc, v ce = 5.0 vdc) mmbt5550 mmbt5551 h fe 60 80 60 80 20 30 e e 250 250 e e e collectoremitter saturation voltage (i c = 10 madc, i b = 1.0 madc) both types (i c = 50 madc, i b = 5.0 madc) mmbt5550 mmbt5551 v ce(sat) e e e 0.15 0.25 0.20 vdc baseemitter saturation voltage (i c = 10 madc, i b = 1.0 madc) both types (i c = 50 madc, i b = 5.0 madc) mmbt5550 mmbt5551 v be(sat) e e e 1.0 1.2 1.0 vdc figure 10.
mmbt5550lt1 mmbt5551lt1 http://onsemi.com 637 figure 1. dc current gain i c , collector current (ma) 500 h , dc current gain fe t j = 125 c -55 c 25 c 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 30 20 300 100 50 7.0 v ce = 1.0 v v ce = 5.0 v figure 2. collector saturation region i b , base current (ma) 1.0 i c = 1.0 ma 0 0.3 0.005 0.01 0.2 0.5 1.0 2.0 20 50 0.8 0.5 0.4 0.9 0.7 0.6 0.2 0.02 0.05 0.1 10 v ce , collector-emitter voltage (volts) 0.1 10 ma 30 ma 100 ma 5.0 figure 3. collector cutoff region v be , base-emitter voltage (volts) 10 1 10 -5 0.4 0.3 0.1 10 0 10 -1 10 -2 10 -3 10 -4 0.2 0 0.1 0.2 0.4 0.3 0.6 0.5 v ce = 30 v t j = 125 c 75 c 25 c i c = i ces , collector current (a) m i c reverse forward i c , collector current (ma) 1.0 v, voltage (volts) 1.0 2.0 5.0 10 20 50 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 0.1 0.2 0.5 figure 4. aono voltages 0.8 0.6 0.4 0.2 0 3.0 30 0.3
mmbt5550lt1 mmbt5551lt1 http://onsemi.com 638 c, capacitance (pf) v r , reverse voltage (volts) 100 1.0 0.2 0.5 1.0 2.0 5.0 10 20 c ibo 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 0.7 3.0 7.0 c obo 10.2 v v in 10 m s input pulse v bb -8.8 v 100 r b 5.1 k 0.25 m f v in 100 1n914 v out r c v cc 30 v 3.0 k t r , t f 10 ns duty cycle = 1.0% values shown are for i c @ 10 ma t j = 25 c i c , collector current (ma) 1000 0.3 1.0 10 20 30 50 0.5 0.2 t, time (ns) 10 20 30 50 100 200 300 500 2.0 100 200 i c /i b = 10 t j = 25 c t r @ v cc = 120 v 3.0 5.0 t r @ v cc = 30 v t d @ v eb(off) = 1.0 v v cc = 120 v i c , collector current (ma) 5000 t, time (ns) 50 100 200 300 500 3000 2000 1000 0.3 1.0 10 20 30 50 0.5 0.2 2.0 100 200 3.0 5.0 i c /i b = 10 t j = 25 c t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v i c , collector current (ma) 2.5 vc for v ce(sat) vb for v be(sat) figure 5. temperature coefficients t j = -55 c to +135 c v , temperature coefficient (mv/ c) q 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 3.0 30 0.3 figure 6. switching time test circuit figure 7. capacitances figure 8. turnon time figure 9. turnoff time
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